Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://ncbi.nlm.nih.gov/pubmed/28482647
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2091-z
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