Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://ncbi.nlm.nih.gov/pubmed/28482647
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2091-z
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