Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2017
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://ncbi.nlm.nih.gov/pubmed/28482647
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2091-z
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