Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

詳細記述

保存先:
書誌詳細
出版年:Nanoscale Res Lett
主要な著者: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
フォーマット: Artigo
言語:Inglês
出版事項: Springer US 2017
主題:
Nano Express
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://ncbi.nlm.nih.gov/pubmed/28482647
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2091-z
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