Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nanoscale Res Lett
Prif Awduron: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Springer US 2017
Pynciau:
Nano Express
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://ncbi.nlm.nih.gov/pubmed/28482647
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2091-z
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