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Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the st...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Chen, YH, Ye, XL, Wang, ZG
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Springer 2006
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC3246632/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-006-9013-9
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