A carregar...

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Main Authors: Zhang, Hongyi, Chen, Yonghai, Zhou, Guanyu, Tang, Chenguang, Wang, Zhanguo
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3552827/
https://ncbi.nlm.nih.gov/pubmed/23110846
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-600
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!