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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer
2012
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3552827/ https://ncbi.nlm.nih.gov/pubmed/23110846 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-600 |
| Etiketak: |
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