The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs

We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the ph...

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Detalhes bibliográficos
Main Authors: Tommila, Juha, Strelow, Christian, Schramm, Andreas, Hakkarainen, Teemu V, Dumitrescu, Mihail, Kipp, Tobias, Guina, Mircea
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3479032/
https://ncbi.nlm.nih.gov/pubmed/22713215
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-313
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