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The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the ph...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2012
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3479032/ https://ncbi.nlm.nih.gov/pubmed/22713215 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-313 |
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