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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
The effect of Sb spray time on the structure of InAs/GaAs quantum dot (QD) systems with Sb spray prior to the capping of a GaAs layer was determined by a Raman scattering study. The Raman spectra of the InAs/GaAs system show two phonon signal bands related to interface (IF) defects, located at the l...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4420766/ https://ncbi.nlm.nih.gov/pubmed/25977672 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0908-1 |
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