Carregant...

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots

The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs,...

Descripció completa

Guardat en:
Dades bibliogràfiques
Autors principals: Dai, Liping, Bremner, Stephen P, Tan, Shenwei, Wang, Shuya, Zhang, Guojun, Liu, Zongwen
Format: Artigo
Idioma:Inglês
Publicat: Springer 2014
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4051383/
https://ncbi.nlm.nih.gov/pubmed/24948897
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-278
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!