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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3494528/ https://ncbi.nlm.nih.gov/pubmed/22935541 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-486 |
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