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Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Bietti, Sergio, Esposito, Luca, Fedorov, Alexey, Ballabio, Andrea, Martinelli, Andrea, Sanguinetti, Stefano
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2015
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4467813/
https://ncbi.nlm.nih.gov/pubmed/26058506
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0930-3
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