Lanean...
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects,...
Gorde:
| Argitaratua izan da: | Sci Rep |
|---|---|
| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group UK
2020
|
| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7162903/ https://ncbi.nlm.nih.gov/pubmed/32300114 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-62248-9 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|