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High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects,...
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| Published in: | Sci Rep |
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| Main Authors: | , , , , , |
| Format: | Artigo |
| Language: | Inglês |
| Published: |
Nature Publishing Group UK
2020
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| Subjects: | |
| Online Access: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7162903/ https://ncbi.nlm.nih.gov/pubmed/32300114 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-62248-9 |
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