Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

Схожие документы

• Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors
  по: Song, Seung Min, et al.
  Опубликовано: (2016)
• Valley-engineered ultra-thin silicon for high-performance junctionless transistors
  по: Kim, Seung-Yoon, et al.
  Опубликовано: (2016)
• Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors
  по: Zhang, Yawen, et al.
  Опубликовано: (2018)
• A vertical silicon-graphene-germanium transistor
  по: Liu, Chi, et al.
  Опубликовано: (2019)
• Top-gated CVD Graphene Transistors with Current Saturation
  по: Bai, Jingwei, et al.
  Опубликовано: (2011)