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Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequ...

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Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Song, Seung Min, Bong, Jae Hoon, Hwang, Wan Sik, Cho, Byung Jin
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4855167/
https://ncbi.nlm.nih.gov/pubmed/27142861
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25392
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