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Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors
Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequ...
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| Udgivet i: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Publishing Group
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4855167/ https://ncbi.nlm.nih.gov/pubmed/27142861 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25392 |
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