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Valley-engineered ultra-thin silicon for high-performance junctionless transistors
Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineerin...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4937383/ https://ncbi.nlm.nih.gov/pubmed/27389874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep29354 |
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