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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Cao, Ronggen, Huang, Gaoshan, Di, Zengfeng, Zhu, Guodong, Mei, Yongfeng
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2014
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4494014/
https://ncbi.nlm.nih.gov/pubmed/26088987
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-695
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