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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by t...
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| Veröffentlicht in: | Nanoscale Res Lett |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4494014/ https://ncbi.nlm.nih.gov/pubmed/26088987 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-695 |
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