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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by t...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Cao, Ronggen, Huang, Gaoshan, Di, Zengfeng, Zhu, Guodong, Mei, Yongfeng
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4494014/
https://ncbi.nlm.nih.gov/pubmed/26088987
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-695
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