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A vertical silicon-graphene-germanium transistor
Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towa...
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| Publicat a: | Nat Commun |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6814790/ https://ncbi.nlm.nih.gov/pubmed/31653842 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-12814-1 |
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