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A vertical silicon-graphene-germanium transistor
Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towa...
Tallennettuna:
| Julkaisussa: | Nat Commun |
|---|---|
| Päätekijät: | , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6814790/ https://ncbi.nlm.nih.gov/pubmed/31653842 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-12814-1 |
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