Načítá se...
Germanium epitaxy on silicon
With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology...
Uloženo v:
| Vydáno v: | Sci Technol Adv Mater |
|---|---|
| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Taylor & Francis
2014
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090408/ https://ncbi.nlm.nih.gov/pubmed/27877657 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/15/2/024601 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|