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Silicon-based silicon–germanium–tin heterostructure photonics
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integr...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
The Royal Society Publishing
2014
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| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3928906/ https://ncbi.nlm.nih.gov/pubmed/24567479 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1098/rsta.2013.0113 |
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