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Top-gated CVD Graphene Transistors with Current Saturation
Graphene transistors are of considerable interest for radio frequency (RF) applications. In general, transistors with large transconductance and drain current saturation is desirable for RF performance, which is however nontrivial to achieve in graphene transistors. Here we report high performance t...
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| Главные авторы: | , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
2011
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3236244/ https://ncbi.nlm.nih.gov/pubmed/21548551 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl201331x |
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