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Top-Gated Graphene Nanoribbon Transistors with Ultra-Thin High-k Dielectrics

The integration ultra-thin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for G...

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Detalhes bibliográficos
Main Authors: Liao, Lei, Bai, Jingwei, Cheng, Rui, Lin, Yungchen, Jiang, Shan, Huang, Yu, Duan, Xiangfeng
Formato: Artigo
Idioma:Inglês
Publicado em: 2010
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2965644/
https://ncbi.nlm.nih.gov/pubmed/20380441
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl100840z
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