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Top-Gated Graphene Nanoribbon Transistors with Ultra-Thin High-k Dielectrics
The integration ultra-thin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for G...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
2010
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2965644/ https://ncbi.nlm.nih.gov/pubmed/20380441 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl100840z |
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