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Sub-100 nm channel length graphene transistors
Here we report high performance sub-100 nm channel length grapheme transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly-doped GaN nanowire as the local gate, with the source and drain electrodes defined through a self-aligned process and the ch...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2964282/ https://ncbi.nlm.nih.gov/pubmed/20815334 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl101724k |
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