Sub-100 nm channel length graphene transistors

Here we report high performance sub-100 nm channel length grapheme transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly-doped GaN nanowire as the local gate, with the source and drain electrodes defined through a self-aligned process and the ch...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Liao, Lei, Bai, Jingwei, Cheng, Rui, Lin, Yungchen, Jiang, Shan, Qu, Yongquan, Huang, Yu, Duan, Xiangfeng
Formato: Artigo
Lenguaje:Inglês
Publicado: 2010
Materias:
Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC2964282/
https://ncbi.nlm.nih.gov/pubmed/20815334
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl101724k
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares