Sub-100 nm channel length graphene transistors

Here we report high performance sub-100 nm channel length grapheme transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly-doped GaN nanowire as the local gate, with the source and drain electrodes defined through a self-aligned process and the ch...

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Hlavní autoři: Liao, Lei, Bai, Jingwei, Cheng, Rui, Lin, Yungchen, Jiang, Shan, Qu, Yongquan, Huang, Yu, Duan, Xiangfeng
Médium: Artigo
Jazyk:Inglês
Vydáno: 2010
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC2964282/
https://ncbi.nlm.nih.gov/pubmed/20815334
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl101724k
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