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High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in sign...

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Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Liao, Lei, Bai, Jingwei, Qu, Yongquan, Lin, Yung-chen, Li, Yujing, Huang, Yu, Duan, Xiangfeng
Μορφή: Artigo
Γλώσσα:Inglês
Έκδοση: National Academy of Sciences 2010
Θέματα:
Διαθέσιμο Online:https://ncbi.nlm.nih.gov/pmc/articles/PMC2872405/
https://ncbi.nlm.nih.gov/pubmed/20308584
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0914117107
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