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High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors
Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in sign...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Academy of Sciences
2010
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2872405/ https://ncbi.nlm.nih.gov/pubmed/20308584 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0914117107 |
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