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High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors
Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in sign...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2872405/ https://ncbi.nlm.nih.gov/pubmed/20308584 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0914117107 |
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