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High speed graphene transistors with a self-aligned nanowire gate
Graphene has attracted considerable interest as a potential new electronic material1–11. With the highest carrier mobility exceeding 200,000 cm(2)/V·s, graphene is of particular interest for ultra-high speed radio frequency (RF) electronics12–18. However, the conventional dielectric integration and...
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| 主要な著者: | , , , , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
2010
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2965636/ https://ncbi.nlm.nih.gov/pubmed/20811365 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/nature09405 |
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