High speed graphene transistors with a self-aligned nanowire gate

Graphene has attracted considerable interest as a potential new electronic material1–11. With the highest carrier mobility exceeding 200,000 cm(2)/V·s, graphene is of particular interest for ultra-high speed radio frequency (RF) electronics12–18. However, the conventional dielectric integration and...

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Main Authors: Liao, Lei, Lin, Yung-Chen, Bao, Mingqiang, Cheng, Rui, Bai, Jingwei, Liu, Yuan, Qu, Yongquan, Wang, Kang L., Huang, Yu, Duan, Xiangfeng
Format: Artigo
Jezik:Inglês
Izdano: 2010
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC2965636/
https://ncbi.nlm.nih.gov/pubmed/20811365
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/nature09405
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