載入...
Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...
Na minha lista:
| 發表在: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group
2016
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4895219/ https://ncbi.nlm.nih.gov/pubmed/27271792 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27451 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|