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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Lee, Keundong, Tchoe, Youngbin, Yoon, Hosang, Baek, Hyeonjun, Chung, Kunook, Lee, Sangik, Yoon, Chansoo, Park, Bae Ho, Yi, Gyu-Chul
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4895219/
https://ncbi.nlm.nih.gov/pubmed/27271792
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27451
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