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Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique
High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until no...
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| Main Authors: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4217097/ https://ncbi.nlm.nih.gov/pubmed/25362933 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06871 |
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