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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4895219/ https://ncbi.nlm.nih.gov/pubmed/27271792 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27451 |
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