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TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices
[Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by m...
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| Publicat a: | ACS Appl Mater Interfaces |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
American
Chemical Society
2020
|
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8008384/ https://ncbi.nlm.nih.gov/pubmed/32508083 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c05038 |
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