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TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices

[Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by m...

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Detalhes bibliográficos
Publicado no:ACS Appl Mater Interfaces
Main Authors: Bejtka, Katarzyna, Milano, Gianluca, Ricciardi, Carlo, Pirri, Candido F., Porro, Samuele
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2020
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8008384/
https://ncbi.nlm.nih.gov/pubmed/32508083
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c05038
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