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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...

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Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Lee, Keundong, Tchoe, Youngbin, Yoon, Hosang, Baek, Hyeonjun, Chung, Kunook, Lee, Sangik, Yoon, Chansoo, Park, Bae Ho, Yi, Gyu-Chul
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4895219/
https://ncbi.nlm.nih.gov/pubmed/27271792
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27451
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