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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...
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| Udgivet i: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Publishing Group
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4895219/ https://ncbi.nlm.nih.gov/pubmed/27271792 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27451 |
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