Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during ‘reading’ and ‘writing’ operations of ReRAM...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Sci Rep
Prif Awduron: Lee, Keundong, Hwang, Inrok, Lee, Sangik, Oh, Sungtaek, Lee, Dukhyun, Kim, Cheol Kyeom, Nam, Yoonseung, Hong, Sahwan, Yoon, Chansoo, Morgan, Robert B., Kim, Hakseong, Seo, Sunae, Seo, David H., Lee, Sangwook, Park, Bae Ho
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group 2015
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC4498384/
https://ncbi.nlm.nih.gov/pubmed/26161992
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11279
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