Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key pro...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Sci Rep
Prif Awduron: Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, Dani, Keshav M.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group 2016
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC4751437/
https://ncbi.nlm.nih.gov/pubmed/26869269
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20890
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