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High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N(2)) and oxygen (O(2)) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the rang...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4789782/ https://ncbi.nlm.nih.gov/pubmed/26972476 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23039 |
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