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Resistive switching behavior in Lu(2)O(3) thin film for advanced flexible memory applications
In this article, the resistive switching (RS) behaviors in Lu(2)O(3) thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu(2)O(3) thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polye...
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| 主要な著者: | , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2014
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3895690/ https://ncbi.nlm.nih.gov/pubmed/24387704 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-3 |
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