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Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was fou...

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Detalhes bibliográficos
Main Authors: Park, Byoungjun, Cho, Kyoungah, Kim, Sungsu, Kim, Sangsig
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2010
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211505/
https://ncbi.nlm.nih.gov/pubmed/27502663
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9789-5
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