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The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template

A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the sam...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Jiang, Changjun, Wu, Lei, Wei, WenWen, Dong, Chunhui, Yao, Jinli
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4232846/
https://ncbi.nlm.nih.gov/pubmed/25404869
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-584
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