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The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the sam...
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Publicado no: | Nanoscale Res Lett |
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Main Authors: | , , , , |
Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
Springer
2014
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Assuntos: | |
Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4232846/ https://ncbi.nlm.nih.gov/pubmed/25404869 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-584 |
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