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Resistive switching behavior in Lu(2)O(3) thin film for advanced flexible memory applications
In this article, the resistive switching (RS) behaviors in Lu(2)O(3) thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu(2)O(3) thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polye...
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| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer
2014
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3895690/ https://ncbi.nlm.nih.gov/pubmed/24387704 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-3 |
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