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Structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics for a-IGZO thin-film transistors
In this letter, we investigated the structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er(2)O(3) dielectric, the a-IGZO TFT device incorporating an Er...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3584805/ https://ncbi.nlm.nih.gov/pubmed/23294730 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-18 |
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