Structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics for a-IGZO thin-film transistors

In this letter, we investigated the structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er(2)O(3) dielectric, the a-IGZO TFT device incorporating an Er...

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Hlavní autoři: Chen, Fa-Hsyang, Her, Jim-Long, Shao, Yu-Hsuan, Matsuda, Yasuhiro H, Pan, Tung-Ming
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2013
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3584805/
https://ncbi.nlm.nih.gov/pubmed/23294730
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-18
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