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Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3853228/ https://ncbi.nlm.nih.gov/pubmed/24229327 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-419 |
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