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Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams
Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in...
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| Päätekijät: | , , , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
International Union of Crystallography
2013
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769061/ https://ncbi.nlm.nih.gov/pubmed/24046493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813004226 |
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