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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and co...
שמור ב:
| הוצא לאור ב: | Nat Commun |
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| Main Authors: | , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2019
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6595053/ https://ncbi.nlm.nih.gov/pubmed/31243278 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-10654-7 |
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