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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and co...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Balaghi, Leila, Bussone, Genziana, Grifone, Raphael, Hübner, René, Grenzer, Jörg, Ghorbani-Asl, Mahdi, Krasheninnikov, Arkady V., Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6595053/
https://ncbi.nlm.nih.gov/pubmed/31243278
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-10654-7
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