Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...

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Detalles Bibliográficos
Publicado en:J Synchrotron Radiat
Main Authors: Davtyan, Arman, Lehmann, Sebastian, Kriegner, Dominik, Zamani, Reza R., Dick, Kimberly A., Bahrami, Danial, Al-Hassan, Ali, Leake, Steven J., Pietsch, Ullrich, Holý, Václav
Formato: Artigo
Idioma:Inglês
Publicado: International Union of Crystallography 2017
Assuntos:
Research Papers
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC5580788/
https://ncbi.nlm.nih.gov/pubmed/28862620
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600577517009584
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