Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...

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Détails bibliographiques
Publié dans:J Synchrotron Radiat
Auteurs principaux: Davtyan, Arman, Lehmann, Sebastian, Kriegner, Dominik, Zamani, Reza R., Dick, Kimberly A., Bahrami, Danial, Al-Hassan, Ali, Leake, Steven J., Pietsch, Ullrich, Holý, Václav
Format: Artigo
Langue:Inglês
Publié: International Union of Crystallography 2017
Sujets:
Research Papers
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5580788/
https://ncbi.nlm.nih.gov/pubmed/28862620
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600577517009584
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