טוען...
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...
שמור ב:
| הוצא לאור ב: | J Synchrotron Radiat |
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| Main Authors: | , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
International Union of Crystallography
2017
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5580788/ https://ncbi.nlm.nih.gov/pubmed/28862620 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600577517009584 |
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