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Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO(x) layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was f...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
International Union of Crystallography
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769066/ https://ncbi.nlm.nih.gov/pubmed/24046494 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813010522 |
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