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Nucleation control for the growth of vertically aligned GaN nanowires

Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matc...

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Detalhes bibliográficos
Main Authors: Hou, Wen-Chi, Wu, Tung-Hsien, Tang, Wei-Che, Hong, Franklin Chau-Nan
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3432621/
https://ncbi.nlm.nih.gov/pubmed/22768872
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-373
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